LITERATURE

Advanced Thermal Processing

of Semiconductor Materials in the msec-Range

W. Skorupa, R. A. Yankov, M. Voelskow, W. Anwand, D. Panknin,
McMahon, M. Smith,  T. Gebel, L. Rebohle,R. Fendler, W. Hentsch
Proc. XIII. Int. Conf. Advanced Thermal Processing of Semiconductors (RTP 2005), Oct. 4-7, 2005, Santa Barbara, USA, IEEE Cat.No.05EX1090, ISBN 0-7803-9223-X, 53-71 (2005)  

Advanced thermal processing

of semiconductor materials in the millisecond range

W. Skorupa, W. Anwand, D. Panknin, M. Voelskow, R.A. Yankov,  T. Gebel
Vacuum 78 , 673-677 (2005)
   

Advanced Thermal Processing

of Semiconductor Materials by Flash Lamp Annealing 

W. Skorupa, D. Panknin, M. Voelskow, W. Anwand,
The Europ.  FLASiC Consort., T. Gebel, R.A. Yankov, S. Paul, W. Lerch
Mat. Res. Soc. Symp. Proc.,.810 (2004) C4.16
  

Ultra shallow junctions produced

by plasma doping and flash lamp annealing 

W. Skorupa, R.A. Yankov, W. Anwand, M. Voelskow,
T. Gebel, D.F. Downey, E.A. Arevalo
Mat. Sc. Eng. B114-115., 358-361 (2004)
 

Flash lamp annealing for the formation of ultra-shallow junctions 

W. Skorupa, R.A. Yankov, T. Gebel, W. Anwand, M. Voelskow
Advances in Electronic Manufacturing Technology, V-EMT 1:23 (Oct25, 2004),  www.vertilog.com (2004) 

Flash lamp annealing with millisecond pulses

for ultra shallow boron profiles in silicon 

T. Gebel, M. Voelskow, W. Skorupa, G. Mannino,
V. Privitera, F. Priolo, E. Napolitani,  A. Carnera
Nuclear Instruments and Methods B 186 (1-4), 287 (2002)