PLASMA BASED ION IMPLANTATION AND DEPOSITION
TOOLS FOR R&D AND SMALL SCALE PRODUCTION
The PIII-300 series provided by DTF is based on a modular concept for implantation, doping and deposition processes. With a variety of optional RF antennas, magnetrons, measurement and process control systems the system can be adapted to a broad range of applications.
PBII - Technology
Ion implantation is a unique tool to change or modify the surface properties of different materials, creating new phases and alloys, far away from the thermal equilibrium.
However, the commercial use of ion implantation is limited due to the high treatment costs and problems of uniform implantations in three dimensional shaped objects, since conventional ion implantation is a typical line of sight process.
Plasma based ion implantation (PBII) has been developed to circumvent these limitations. A substrate is immersed into plasma. Applying negative high voltage pulses (up to -100 kV) to the substrate, ions are extracted from the plasma, accelerated by the potential drop in the sheath, and implanted into the outermost surface of the sample.
The implantation into the surface leads to a mixing of implanted ion species with the substrate material.
The parameters of this implantation allow to control:
- depth profiling (by adjusting the energy of the implanted ions
using pulses at different voltages) - dose of the implanted species (by adjusting pulse length
and number of pulses)


