ALD - ATOMIC LAYER DEPOSITION

A NEW AGE OF CONTROLLED DEPOSITION NY ULTRATHIN MULTI-LAYER

Advantages of DTF´s ALD Coating-Tools at a Glance

excellent layer conformity of 3D-geometries (high aspect ratios)
overall layer thicknesses of about 1 nm to more than some hundred nanometers according to the number of coating cycles
usability of a wide range of different precursors
DLI systems for precursor development
adjustable process temperature below 400 °C for ALD-processing
possibility of process temperatures above 400 °C
for (standard) CVD processing
highly adaptable and easy-to-use control-software

PROPERTIES	CVC	PECVD	PVD	ALD
desposition rate	high 1-10 μm/h	high 1-5 μm/h	medium 0.1 – 1 μm/h	low 1-5 nm/min
homogeneity	high	medium / high	high for planar substrates	very high
deposition of complex 3D-geometries	very good	good	limited	excellent
temperature budget to substrat	high	low	low	low
adhesion of layers	very high	medium / high	medium / high	medium
variety of materials	high (depending on precursors, limited of metals)	high (depending on precursors, limited for metals)	high all metals, not possible for a-C:H, a-Si:H	high (depending on precursors, limited of metals)

PVD (e.g. sputtering)
coatings on sidewalls too thin

ALD perfect conformity of the layer

CVD bulging on edges

trench-coating with a homogeneous alumina-layer (source: FhG IKTS)

Typical Layer Materials for ALD processes (depending on the available precursors)