ION IMPLANTATION
A automatic wafer handling system mounted to a 3 MV Tandetron accelerator allow the treatment of productions lots at a troughput of up to 100 wafers / h (depending on ion dose).Wafers are treated in a batch mode. The machine is optimized for the implantation of 4, 5 and 6” wafers.
SINGLE WAFER MODE - OPTIMUM CONDITIONS FOR R&D LOTS
Implanting of wafers (5” scanning area) in single wafer mode allows easy parameter scans for R&D purposes. The wafers are mounted in cassettes (up to 13 cassettes per run). The Ion dose is controlled by means of corner cups which are located at the edges of the cassette.
advantages:
- flexible dose / energy variation for R&D
- flexible layouts possible (different cassettes are available, 4”, 5”, others upon request)
- treatment of small series
ENDSTATION ISIS (BASED ON EATON NV - 10)
An automatic wafer handling system mounted to a 3 MV Tandetron accelerator allows high troughput ion implantation (typically 50 – 100 wafers/h for doses in the 1011 - 1012 cm-2 range) for high energy ion implantation. (e.g. He++ ions at 2-6 MeV for power semiconductors).
The wafers are implanted in batch mode. Possible wafer sizes are 4”, 5” and 6”. The wafers are mounted on a disk in 2-point-clamp or clampless mode.
5“ WAFERS (10W / BATCH), 2-POINT-CLAMP
6“ WAFERS (8W / BATCH), CLAMPLESS
