ION IMPLANTATION

Covering an energy range from 2 keV to 25 MeV and having a lot of experience in the implantation of “exotic” ions we perform ion implantations of semiconductor wafers and other materials. Handling systems for 4”, 5” and also 6” wafers allow high-energy implantations at high-throughput.

Evaluation lots and small series are implanted in a single wafer machine, where wafers are fixed in wafer cassettes. This allows maximum flexiblity to treat different substrates and also to vary parameters like energy or dose for process evaluation.