PLASMA BASED ION IMPLANTATION AND DEPOSITION

TOOLS FOR R&D AND SMALL SCALE PRODUCTION

Doping profile
after implantation
³¹P, 20 keV, 1x10¹⁵cm^-2

Rp: 29 nm,
dRp: 13 nm
2x10²¹cm^-3

Annealing
RTA, 1000°C, 10 sec